Photoresponse improvement of mixed-dimensional 1D–2D GaAs photodetectors by incorporating constructive interface states
نویسندگان
چکیده
A mixed-dimensional photodetector was constructed to convert the harmful surface states of low-dimensional materials into their constructive interface states.
منابع مشابه
Improved photoresponse of InAs/GaAs quantum dot infrared photodetectors by using GaAs1−xSbx strain reducing layer
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ژورنال
عنوان ژورنال: Nanoscale
سال: 2021
ISSN: ['2040-3372', '2040-3364']
DOI: https://doi.org/10.1039/d0nr06788a